(Hong Kong)
Product Summary
The 28F128J3C150 is a StrataFlash memory. It contains high-density memories organized as 32 Mbytes or 16Mwords (256-Mbit, available on the 0.18μm lithography process only), 16 Mbytes or 8 Mwords(128-Mbit), 8 Mbytes or 4 Mwords (64-Mbit), and 4 Mbytes or 2 Mwords (32-Mbit). The device can be accessed as 8- or 16-bit words. The 28F128J3C150 is optimized architecture and interface dramatically increases read performance by supporting page-mode reads. It is ideal for non-clock memory systems.
Parametrics
28F128J3C150 absolute maximum ratings: (1)Temperature under Bias Extended: –40 ℃ to +85 ℃; (2)Storage Temperature: –65 ℃ to +125 ℃; (3)Voltage On Any signal: –2.0 V to +5.0 V; (4)Output Short Circuit Current: 100 mA.
Features
28F128J3C150 features: (1)Program and Erase suspend support; (2)Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible; (3)128-bit Protection Register; 64-bit Unique Device Identifier; 64-bit User Programmable OTP Cells; (4)Absolute Protection with VPEN = GND; (5)Individual Block Locking; (6)Block Erase/Program Lockout during Power Transitions; (7)Operating Temperature: -40 ℃ to +85 ℃; (8)100K Minimum Erase Cycles per Block; (9)0.18 μm ETOX. VII Process (J3C); (10)0.25 μm ETOX. VI Process (J3A).
Diagrams
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 28F128J3 |
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28F128J3A |
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28F128W18 |
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28F1602C3 |
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28F1604C3 |
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Negotiable |
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28F160B3 |
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Negotiable |
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