SST27SF512-70-3C-PGE

Many-Time Programmable (MTP) flash, DIP, -0.5V to 14.0V, 1.0W, Low Power Consumption

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Price:: US $0.80~1.20 / piece [Get Latest Price]

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PartNumber:: SST27SF512-70-3C-PGE

Brand:: Silicon Storage Technology, Inc - SST | Pack: DIP | D/C: 06+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-07-06

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Part Number:SST27SF512-70-3C-PGE
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Product Summary

The SST27SF512-70-3C-PGE is a 64K×8 CMOS, Many-Time Programmable (MTP) low cost flash, manufactured with proprietary of SST, high performance SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST27SF512-70-3C-PGE can be electrically erased and programmed at least 1000 times using an external programmer with a 12V power supply. It has to be erased prior to programming. The device conforms to JEDEC standard pinouts for byte-wide memories.

Parametrics

SST27SF512-70-3C-PGE absolute maximum ratings: (1)Temperature Under Bias: -55℃ to +125℃; (2)Storage Temperature: -65℃ to +150℃; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD+0.5V; (4)Transient Voltage (<20 ns) on Any Pin to Ground Potential: -2.0V to VDD+2.0V; (5)Voltage on A9 and VPP Pin to Ground Potential: -0.5V to 14.0V; (6)Package Power Dissipation Capability (TA = 25℃): 1.0W; (7)Through Hole Lead Soldering Temperature (10 Seconds): 300℃; (8)Surface Mount Solder Reflow Temperature: 260℃ for 10 seconds; (9)Output Short Circuit Current: 100 mA.

Features

SST27SF512-70-3C-PGE features: (1)Organized as 64K×8; (2)4.5-5.5V Read Operation; (3)Superior Reliability: Endurance: At least 1000 Cycles; Greater than 100 years Data Retention; (4)Low Power Consumption: Active Current: 20 mA (typical); Standby Current: 10 μA (typical); (5)Fast Read Access Time: 70 ns.