(Hong Kong)
Product Summary
The MG240V1US41 is a silicon N-channel IGBT.
Parametrics
MG240V1US41 absolute maximum ratings: (1)Collector-emitter voltage VCES: 1700V; (2)Gate-emitter voltage VGES: ±20V; (3)Collector current DC IC: 240A; 1ms ICP: 480A; (4)Forward current DC IF: 240A; 1ms IFM: 480A; (5)Collector power dissipation(Tc=25℃) PC: 2400W; (6)Junction temperature Tj: 150℃; (7)Storage temperature range Tstg: -40~125℃; (8)Isolation voltage VISOL: 4000(AC 1min) V; (9)Screw torque(M4/M6 mounting): 2/3/3 N.m.
Features
MG240V1US41 features: (1)The electrodes are isolated from case; (2)High input impedance; (3)Enhancement-mode; (4)High speed: tf=1.5μs(max)(IC=240A); trr=0.6μs(max)(IF=240A).
Diagrams
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 MG241A |
Other |
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Data Sheet |
Negotiable |
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MG241C |
Other |
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Data Sheet |
Negotiable |
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MG245A |
Other |
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Data Sheet |
Negotiable |
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MG245C |
Other |
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Data Sheet |
Negotiable |
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MG246A-B |
Other |
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Data Sheet |
Negotiable |
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MG246C-B |
Other |
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Data Sheet |
Negotiable |
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