(Hong Kong)
Product Summary
Fifth Generation HEXFET IRFP250N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design of the IRFP250N that HEXFET Power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package of the IRFP250N is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
Parametrics
IRFP250N absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 30; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 21 A; (3)IDM Pulsed Drain Current: 120; (4)PD @TC = 25℃ Power Dissipation: 214 W; (5)Linear Derating Factor: 1.4 W/℃; (6)VGS Gate-to-Source Voltage: ± 20 V; (7)EAS Single Pulse Avalanche Energy: 315 mJ; (8)IAR Avalanche Current: 30 A; (9)EAR Repetitive Avalanche Energy: 21 mJ; (10)dv/dt Peak Diode Recovery dv/dt: 8.6 V/ns.
Features
IRFP250N features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements.
Diagrams
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Negotiable |
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IRFP250NPBF |
International Rectifier |
MOSFET MOSFT 200V 30A 75mOhm 82nCAC |
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