Product Summary

The 29DL322BE-90PFTN is a 32M-bit, 3.0 V-only Flash memory which is organized as 4M bytes of 8 bits each or 2M words of 16 bits each. The device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The 29DL322BE-90PFTN can also be reprogrammed in standard EPROM programmers.
It is organized into two banks, Bank 1 and Bank 2, which can be considered to be two separate memory arrays as far as certain operations are concerned.

Parametrics

29DL322BE-90PFTN absolute maximum ratings: (1)Storage Temperature Tstg: min=-55℃, max=+125℃; (2)Ambient Temperature with Power Applied TA: min=-40℃, max=+85℃; (3)Voltage with Respect to Ground All pins except A9, OE, RESET: VIN, VOUT: min=-0.5, max=VCC+0.5 V; (4)Power supply voltage VCC: min=-0.5, max=+4.0 V; (5)A9, OE, and RESET VIN: min=-0.5, max=+13.0 V; (6)WP/ACC VIN: min=-0.5, max=+10.5 V.

Features

29DL322BE-90PFTN features: (1)0.23 μm Process Technology; (2)Single 3.0 V read, program, and erase: Minimizes system level power requirements; (3)Compatible with JEDEC-standard commands: Uses same software commands as E2PROMs; (4)Minimum 100,000 program/erase cycles; (5)High performance: 80 ns maximum access time; (6)Sector Group Protection Set function by Extended sector group protection command; (7)Fast Programming Function by Extended Command.

Diagrams

29DL322BE-90PFTN block diagram

29DL323TE-90
29DL323TE-90

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Data Sheet

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29DL323TE-90DFTN

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29DL64DF-70PFTN

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Data Sheet

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