IRFPG50

NPN Silicon Germanium, RF Transistor, 2.3 V VCEO, 3 mA IB, 1.2 V VEBO, High gain, low noise

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.70~0.90 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $0.70~0.90

PartNumber:: IRFPG50

Brand:: International Rectifier - IR | Pack: TO | D/C: 06+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. winona's store

(Hong Kong)

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2011-07-13

From Other Seller

Part Number:IRFPG50
US $0.70 - 0.90
CM2030-A0TR

US $0.92 - 2.50 / Piece
(0) Remove
MOC3063

US $0.32 - 1.50 / Piece
(0) Remove
Quantity:

piece

Product Summary

The IRFPG50 is a NPN Silicon Germanium RF Transistor.

Parametrics

IRFPG50 maximum ratings: (1)Collector-emitter voltage VCEO: 2.3 V; (2)Collector-emitter voltage VCES: 7.5 V; (3)Collector-base voltage VCBO: 7.5 V; (4)Emitter-base voltage VEBO: 1.2 V; (5)Collector current IC: 80 mA; (6)Base current IB: 3 mA; (7)Junction temperature Tj: 150 ℃; (8)Ambient temperature TA: -65 to 150 ℃; (9)Storage temperature Tstg: -65 to 150 ℃.

Features

IRFPG50 features: (1)High gain low noise RF transistor; (2)Provides outstanding performance for a wide range of wireless applications; (3)Ideal for CDMA and WLAN applications; (4)Outstanding noise figure F = 0.7 dB at 1.8 GHz; (5)Outstanding noise figure F = 1.3 dB at 6 GHz; (6)Maximum stable gain. Gms = 21.5 dB at 1.8 GHz; Gma = 11 dB at 6 GHz; (7)Gold metallization for extra high reliability.