(Hong Kong)
Product Summary
The IRF740FI is a N-channel enhancement mode power MOS transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Applications of the IRF740FI include DC switch, switching power supplies, ultrasonic equipment and electronic ballast for fluorescent lamps.
Parametrics
IRF740FI absolute maxing ratings: (1)VDS: Drain-source voltage(VGS=0): 400V; (2)VDGR: Drain-gate voltage(RGS=20KΩ): 400V; (3)VGS: Gate-source voltage: ±20V; (4)IDM: Drain current(plused): 40A; (5)IDLM: Drain inductive current, clamped(L=100μH): 40A; (6)ID: Drain current(cont.)at Tc=25℃: 5.5A; (7)ID: Drain current(cont.)at Tc=100℃: 3A; (8)Ptot: Total dissipation at Tc<25℃: 125W; Derating factor: 1W/℃; (9)Tstg Storage temperature: -55 to 150℃; (10)Tj Max. operating junction temperature: 150℃.
Features
IRF740FI features: (1)High voltage-for switching power supplies; (2)Ultra fast switching; (3)Easy drive-for reduced cost and size.
Diagrams
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