Product Summary

The IRFF9122 is an advanced power MOSFET. The device is designed, tested, and guranteed to withstand a specified level of energy in the breakdown avalanche mode of peration. The IRFF9122 is a p-channel enhancement-mode silicon-gate power field-effect transistor. The IRFF9122 is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. The IRFF9122 can be operated directly from integrated circuits.

Parametrics

IRFF9122 absolute maximum ratings: (1)drain-source voltage, VDS: -100V; (2)drain-gate voltage, VDGR: -100V; (3)contimuous drain current: -3.5A; (4)pulse drain current, IDM: -14A; (5)maximum power dissipation: 20W; (6)linear derating factor: 0.16W/℃; (7)single-pulse avalanche energy rating, Eas: 370mJ; (8)operating junction and storage temeprature range, Tj, Tstg: -55 to 150℃; (9)lead temperature: 300℃.

Features

IRFF9122 features: (1)single pulse advalanche energy rated; (2)SOA is power-dissipation limited; (3)nanosecond switching speeds; (4)linear transfer characteristics; (5)high input impedance.

Diagrams

IRFF9122 terminal diagram

IRFF024
IRFF024

Other


Data Sheet

Negotiable 
IRFF110
IRFF110

Other


Data Sheet

Negotiable 
IRFF120
IRFF120

Other


Data Sheet

Negotiable 
IRFF130
IRFF130

Other


Data Sheet

Negotiable 
IRFF210
IRFF210

Other


Data Sheet

Negotiable 
IRFF220
IRFF220

Other


Data Sheet

Negotiable