Product Summary

The IRFD120 is a power MOSFET. The IRFD120 prvides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The 4-pin DIP package of the IRFD120 is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.

Parametrics

IRFD120 absolute maximum ratings: (1)ID@TC=25℃, contimuous drain current, VGS@10V: 1.3A; (2)ID@TC=100℃, contimuous drain current, VGS@10V: 0.94A; (3)IDM, pulsed drain current: 10A; (4)PD@TC=25℃, power dissipation: 1.3W; (5)linerat derating factor: 0.0083W/℃; (6)VGS, gate-to-source voltage: ±20V; (7)EAS, single pulse avalanche energy: 100mJ; (8)IAR, avalanche current: 1.3A; (9)EAR, repetitive avalanche energy: 0.13mJ; (10)dv/dt, peak diode recovery dv/dt: 5.5V/ns; (11)Tj, Tstg, operating junction and storage temeprature range: -55 to 175℃; (12)soldering temperature, for 10seconds: 300℃.

Features

IRFD120 features: (1)dynamic dv/dt rating; (2)repetitive avalanche rated; (3)for automatic insertion; (4)end stackable; (5)175℃ operating temperature; (6)fast switching; (7)ease of paralleling.

Diagrams

IRFD120 circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFD120
IRFD120
Vishay Semiconductors
MOSFET 100V Single N-Channel HEXFET
Data Sheet
0-1: $1.33
1-10: $1.15
10-50: $1.10
50-100: $0.98
IRFD120, SiHFD120
IRFD120, SiHFD120
Other

Data Sheet
Negotiable 
IRFD120PBF
IRFD120PBF
Vishay Semiconductors
MOSFET 100V Single N-Channel HEXFET
Data Sheet
0-1: $0.58
1-10: $0.44
10-100: $0.38
100-250: $0.34