(Hong Kong)
Product Summary
The GT8G133 is a type of TOSHIBA insulated gate bipolar transistor, which is widely used in strobe flash.
Parametrics
GT8G133 maximum ratings: (1)Collector-emitter voltage: 400 V; (2)Gate-emitter voltage: DC, ±6V, pulse, ± 8V; (3)Collector current: 150 A; (4)Collector power: 1.1 W; (5)dissipation（t＝10 s): 0.6 W; (6)Junction temperature: 150 ℃; (7)Storage temperature range: 55~150 ℃.
Features
GT8G133 features: (1)Compact and Thin (TSSOP-8) package; (2)Enhancement-mode; (3)4-V gate drive voltage: VGE = 4.0 V (min) (IC = 150 A); (4)Peak collector current: IC = 150 A (max).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 GT8G133 |
Other |
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Data Sheet |
Negotiable |
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 |
GT8G133(TE12L,Q) |
Toshiba |
IGBT Transistors IGBT, 400V, 150A |
Data Sheet |
Negotiable |
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