Product Summary

The CPV363M4F is an IMS (Insulated Metal Substrate) Power Module. The CPV363M4F is more efficient than comparable bipolar transistor module, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package of the CPV363M4F is highly suited to motor drive applications and where space is at a premium.

Parametrics

CPV363M4F absolute maximum ratings: (1)VCES, Collector-to-Emitter Voltage: 600 V; (2)IC @ TC = 25℃, Continuous Collector Current, each IGBT: 16; (3)IC @ TC = 100℃, Continuous Collector Current, each IGBT: 8.7; (4)ICM, Pulsed Collector Current: 50 A; (5)ILM, Clamped Inductive Load Current: 50A; (6)IF @ TC = 100℃, Diode Continuous Forward Current: 6.1A; (7)IFM, Diode Maximum Forward Current: 50A; (8)VGE, Gate-to-Emitter Voltage: ±20 V; (9)VISOL, Isolation Voltage, any terminal to case, 1 minute: 2500VRMS; (10)PD @ TC = 25℃, Maximum Power Dissipation, each IGBT: 36 W; (11)PD @ TC = 100℃, Maximum Power Dissipation, each IGBT: 14w; (12)TJ, TSTG Operating Junction and Storage Temperature Range: -40 to +150℃; (13)Soldering Temperature, for 10 sec: 300℃.

Features

CPV363M4F features: (1)Fully isolated printed circuit board mount package; (2)Switching-loss rating includes all tail losses; (3)HEXFREDTM soft ultrafast diodes; (4)Optimized for medium operating (1 to 10 kHz).

Diagrams

CPV363M4F block diagram

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