Product Summary
The BUP213 is an IGBT.
Parametrics
BUP213 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage RGE = 20 kΩ, VCGR: 1200V; (3)Gate-emitter voltage, VGE: ±20V; (4)DC collector current, IC: 20A when TC = 25℃; 32A when TC = 90℃; (5)Pulsed collector current, tp = 1 ms, ICpuls: 40A when TC = 90℃; 64A when TC = 25℃; (6)Avalanche energy, single pulse IC = 15 A, VCC = 50 V, RGE = 25 Ω; (7)L = 200 μH, Tj = 25℃, EAS: 22mJ; (8)Power dissipation, TC = 25℃, Ptot: 200W; (9)Chip or operating temperature, Tj: -55 to + 150℃; (10)Storage temperature, Tstg: -55 to + 150℃; (11)DIN humidity category, DIN 40 040: E; (12)IEC climatic category, DIN IEC 68-1: 55 / 150 / 56; (13)IGBT thermal resistance, chip case, RthJC: ≤ 0.63 K/W.
Features
BUP213 features: (1)Low forward voltage drop; (2)High switching speed; (3)Low tail current; (4)Latch-up free; (5)Avalanche rated.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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BUP213 |
Infineon Technologies |
IGBT Transistors IGBT CHIP NPT TECH 1200V 15A |
Data Sheet |
Negotiable |
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BUP213 E3045A |
Infineon Technologies |
IGBT Transistors |
Data Sheet |
Negotiable |
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