(Hong Kong)
Product Summary
The MBM29DL322BE-90PFTN is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. The device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The MBM29DL322BE-90PFTN can also be reprogrammed in standard EPROM programmers. The MBM29DL322BE-90PFTN is organized into two banks, Bank 1 and Bank 2, which can be considered to be two separate memory arrays as far as certain operations are concerned.
Parametrics
MBM29DL322BE-90PFTN absolute maximum ratings: (1)Storage Temperature, Tstg:–55 +125℃; (2)Ambient Temperature with Power Applied, TA:–40 +85℃; (3)Voltage with Respect to Ground All pins except A9, OE, RESET, VIN, VOUT:–0.5 VCC+0.5 V; (4)Power Supply Voltage, VCC:–0.5 +4.0 V; (5)A9, OE, and RESET, VIN: –0.5 +13.0 V; (6)WP/ACC, VIN:–0.5 +10.5 V.
Features
MBM29DL322BE-90PFTN features: (1)0.23 μm Process Technology; (2)Simultaneous Read/Write operations (dual bank); (3)Multiple devices available with different bank sizes; (4)Host system can program or erase in one bank, then immediately and simultaneously read from the other bank; (5)Zero latency between read and write operations; (6)Read-while-erase; (7)Read-while-program; (8)Single 3.0 V read, program, and erase; (9)Minimizes system level power requirements; (10)Compatible with JEDEC-standard commands; (11)Uses same software commands as E2PROMs; (12)Compatible with JEDEC-standard world-wide pinouts; (13)Minimum 100,000 program/erase cycles; (14)High performance 80 ns maximum access time.
Diagrams
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