Product Summary

The BSM75GD120DN2 is an IGBT Power Module.

Parametrics

BSM75GD120DN2 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage RGE = 20 kW, VCGR: 1200V; (3)Gate-emitter voltage, VGE: ±20V; (4)DC collector current, IC: 75A when ; (5)Pulsed collector current, tp = 1 ms, ICpuls: 150A when TC=80℃; 206A when TC=25℃; (6)Power dissipation per IGBT TC = 25℃, Ptot: 520W; (7)Chip temperature, Tj: + 150℃; (8)Storage temperature, Tstg: -40 to + 125℃; (9)Thermal resistance, chip case, RthJC: ≤0.235 K/W; (10)Diode thermal resistance, chip case, RthJCD: ≤0.55K/W; (11)Insulation test voltage, t = 1min: Vis: 2500 Vac; (12)Creepage distance: 16 mm; (13)Clearance: 11mm; (14)DIN humidity category, DIN 40 040: F sec; (15)IEC climatic category, DIN IEC 68-1: 40 / 125 / 56 sec.

Features

BSM75GD120DN2 features: (1)Solderable Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM75GD120DN2
BSM75GD120DN2
Infineon Technologies
IGBT Modules 1200V 75A 3-PHASE
Data Sheet
0-1: $105.90
1-10: $95.31
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM75GAL120DN2
BSM75GAL120DN2
Infineon Technologies
IGBT Modules 1200V 75A CHOPPER
Data Sheet
0-1: $34.32
1-10: $30.89
BSM75GAR120DN2
BSM75GAR120DN2
Infineon Technologies
IGBT Transistors 1200V 100A GAR CH
Data Sheet
0-1: $41.11
1-5: $39.05
5-10: $37.00
10-50: $34.70
BSM75GB120DLC
BSM75GB120DLC
Infineon Technologies
IGBT Modules 1200V 75A DUAL
Data Sheet
0-1: $43.16
1-10: $38.84
BSM75GB120DN2
BSM75GB120DN2
Infineon Technologies
IGBT Modules 1200V 75A DUAL
Data Sheet
0-1: $45.58
1-10: $41.02
BSM75GB120DN2_E3223
BSM75GB120DN2_E3223
Infineon Technologies
IGBT Modules N-CH 1.2KV 105A
Data Sheet
0-8: $41.48
8-10: $39.89
BSM75GB120DN2_E3223c-Se
BSM75GB120DN2_E3223c-Se
Infineon Technologies
IGBT Modules IGBT 1200V 75A
Data Sheet
0-6: $67.20
6-10: $60.60