(Hong Kong)
Product Summary
The 2N2857 is a NPN transistor. It is designed for amplifier, oscillator and converter applications up to 500MHz.
Parametrics
2N2857 absolute maximum ratings: (1)VCBO Collector – Base Voltage: 30V; (2)VCEO Collector – Emitter Voltage: 15V; (3)VEBO Emitter – Base Voltage: 2.5V; (4)IC Collector Current: 40mA; (5)PD Total Device Dissipation @ TA =25℃: 200mW; (6)PD Total Device Dissipation @ TC =25℃: 300mW; (7)TSTG , TJ Operating and Storage Temperature Range: -65 to 200℃.
Features
2N2857 features: silicon NPN transistor.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 2N2857 |
Central Semiconductor |
Transistors Bipolar (BJT) NPN VHF/UHF AM |
Data Sheet |
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2N2857CSM |
Other |
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Data Sheet |
Negotiable |
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2N2857UB |
Other |
|
Data Sheet |
Negotiable |
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2N2857UB_1356743 |
Other |
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Data Sheet |
Negotiable |
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